| 摘要 |
PURPOSE:To improve sensitivity from a visible to near IR range by providing intermediate layers between electric charge transfer layers and electric charge generating layers and specifying the difference of phi (energy gap between Fermi level and conduction electron band) between the intermediate layers and the layers adjacent thereto to a specific value or below. CONSTITUTION:This photosensitive body is constituted by laminating the electric charge transfer layer 2 consisting of a a-SiC:H or a-SiN:H contg. C, N, and O, the intermediate layer 6, the charge transfer layer 5 consisting of a-Si:H, the intermediate layer 7, the charge generating layer 3 consisting of a-SiGe:H, and a surface reforming layer 4 consisting of a a-SiC:H on, for example, a conductive substrate 1. The chemical compsn. of the intermediate layers 6, 7 is made to the chemical compsn. between the charge transfer layer and the charge generating layer 3 to decrease the difference of the phi (energy gap between Fermi level and conduction electron band) between the intermediate layers 6, 7 and the layers adjacent thereby to <=0.1eV, by which the energy gap between the adjacent layers is decreased and the generation of spike is decreased. Since the difference of the phi between the intermediate layers and the adjacent layers is specified, the photosensitive body having the higher electrostatic chargeability and sensitivity is obtd. |
