| 摘要 |
PURPOSE:To achieve the reduction of noise and the improvement in the stability of a recording bit, by a method wherein the vapor of oxide In2O3 is simultaneously deposited in vapor deposition of In1-xSbx and the thin film in which In1-xSbx and In2O3 are mixed is formed. CONSTITUTION:An optical recording film has the following composition: (In1-xSbx)y(In2O3)1-y (in the formula, x and y are 0.5<x<0.9 and 0.2<y<1.0 on the basis of the number of atoms). This thin film consists of InSb crystal, Sb crystal, and In2O3 crystal and InSb, Sb, and In2O3 do not react on each other on the basis of the three-dimensional diagram of In, Sb, and O. Therefore, In2O3 mixed in the thin film does not chemically react on other InSb crystal and Sb crystal and independently exist as In2O3 crystal. It prevents the growing of InSb crystal and Sb crystal and restrains the transfer of an atom. Therefore, the flapping of the shape, especially the extension of the bit formed by the irradiation of laser light does not exist and noise is not generated. Then, the recording is stabilized. |
