发明名称 GATE DRIVE CIRCUIT
摘要 PURPOSE:To easily change a gate bias voltage by adopting the constitution in which the resistance is adjusted so as to change the gate-source voltage of a field effect voltage. CONSTITUTION:One terminal of the secondary winding of a pulse transformer 1 is connected to a capacitor 2 and a gate terminal of the 1st field effect transistor (TR) 6, the other terminal of the capacitor 2 is connected to a source of the 2nd field effect TR 7 and a cathode of a diode, the source of the TR 6 and one terminal of the 1st resistor 4 are connected together, the other terminal of the 1st resistor 4 is connected to the anode of the diode 3 and the drain of the 2nd field effect TR 7 is connected to the one terminal of the 2nd resistor 5. Then the other terminal of the 2nd resistor 5 is connected to a gate of the 3rd field effect TR 8 and the drain of the 1st field effect TR 6 is connected to the source of the 3rd field effect TR 8. Thus, in changing the 1st resistor 4, the gate bias voltage is easily changed.
申请公布号 JPS62254517(A) 申请公布日期 1987.11.06
申请号 JP19860096943 申请日期 1986.04.28
申请人 MATSUSHITA SEIKO CO LTD 发明人 SAKAMOTO KIYOUYA;MORITSUGU JIRO
分类号 H03K17/08;H03K17/687;H03K17/691 主分类号 H03K17/08
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