| 摘要 |
PURPOSE:To increase the yield while improving the evenness and making redundant interconnection possible by a method wherein, in case of using a substrate in large space, a semiconductor film is made of an alpha-Si film and the like at low temperature to be loaded with a large spaced substrate while necessary part (e.g., transistor part) is beam--annealed by laser or the like. CONSTITUTION:After depositing an alpha-Si film 2 on an insulating substrate 1, necessary part is beam-annealed to form a polycrystalline or single crystal Si film 20 while a gate insulating film 5 is formed to be left in an island state. Selective ion implantation is conducted using an island type film 5 as a mask while in case of forming an n channel TFT, n type impurity such as P, As, etc., is added to form n<+> Si films 25. The implanted impurities can be effectively activated by beam--annealing process while the cross-interconnections are performed between the n<+> Si films 25 or a second conductive film 30 and a third conductive film 40 through the intermediary of an interlayer insulating film 6. Through these procedures, a TFT device using a polycrystalline or single crystal semiconductor thin film can be provided with large space and excellent evenness and high yield by means of beam annealing process. Especially, the probability of disconnection to be occured can be lessened by redundant interconnections available while the space expansion can be facilitated by low resistance.
|
