| 摘要 |
PURPOSE:To prevent the generation of a parasitic channel caused by an electric interference by a method wherein a buried channel type is used on the MOSFET of the active layer of two or more layers of the semiconductor device on which a plurality of layers of semiconductor region having an active layer are formed. CONSTITUTION:A buried channel type is used on the active layer of the second layer and above of the MOSFET, and the conductivity types of the MOSFET located at the positions corresponding to the upper and the lower active layers are made opposite to each other. When the lower gate electrode 106 gives an effect upon the lower part of the P-region 114 of the upper MOSFET W1 in the state wherein the MOSFET W1 is laminated, an inversion layer 118 is induced. As electrons are present on the inversion layer 118, it is not turned into the parasitic channel of the FET W1. A buried channel type MOSFET W2 is constituted corresponding to an MOSFET V2 on an insulating film 105. If said FET W2 is a single unit, a neutral region 124 is formed when positive voltage is applied to a gate electrode 123, and it is turned into a buried channel for electrons. When the lower gate electrode 101 gives an effect on the lower part of the N-region 121 of the upper FET W2 in the state wherein the FET W2 is laminated, an inversion layer is induced. |
