| 摘要 |
PURPOSE:To obtain a desired input threshold level without increasing the occupied area by changing the base potential of a P-channel or an N-channel MOS transistor (TR) constituting a CMOS inverter. CONSTITUTION:The base potential (P-well region potential) of the 1st N-channel MOS TR 3 or that of the 1st P-channel MOS TR 2 in the CMOS inverter circuit comprising the 1st N-channel MOS TR 3 and the 1st P-channel MOS TR 2 is made variable by using the 2nd P-channel MOS TR 4 and a resistor 5 or the 2nd N-channel MOS TR 4' and a resistor 5'. Thus, the input threshold level of the inverter circuit is controlled and a desired input threshold level is obtained without increasing the occupied area on a chip. |
