| 摘要 |
PURPOSE:To enable increasing an operation speed by minimizing an ON resistance and minimizing the secular change of threshold voltage VTH to an ON state by providing one or a plural number of holes to make carriers pass in an electrode on the carrier injection side providing another electrode which injects the carrier outside of two electrodes for ON, OFF provided in a semiconductor. CONSTITUTION:High conductive films 62 and 61a, 61b, 61c, 61d, 61e are brought into ohmic contact with a semiconductor film 8 and a high conductive film 60 is with a p-type semiconductor film 9. The high conductive films 61a, 61b, 61c, 61d and 61e are also connected to the circumference. The p-type semiconductor film 9 has a function of injecting a hole, is an emitter and the abovementioned high conductive films 61a-61e are base electrodes. The base electrodes 61a-61e are perforated electrodes which have a plural number of empty holes or empty grooves. The interval is made less than twice the diffusion length LD of the injected carrier. The thickness of a region where the carrier is injected is also made less than the diffusion length LD. In order to operate a thin film transistor, a collector electrode 62 is made the lowest electric potential and voltage VBC is applied to the base electrodes 61a-61e.
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