| 摘要 |
PURPOSE:To reduce lattice defects by a method wherein, when a thin film is going to be formed, a photo organic metal vapor-phase thermal decomposition method, in which the dialkyltellurium indicated by a specific structural formula is used as raw material, is used. CONSTITUTION:The dialkylzinc and dialkyltellurium which are the raw material of ZnTe are sealed in bubblers 11 and 12, the organic zinc compound indicated by the general formula of RR''Zn-R''R'''X(R, R', R'', R''': alkyl radical XS or Se) is sealed in a bubbler 13, H2S and H2Se are diluted with hydrogen and filled in a cylinder 14. The raw material sealed in the bubblers is fed by the bubbling of carrier gas. The feeding quantity of raw material is controlled by the temperature of the bubblers to be set by a constant temperature bath 15 and the flow rate of the carrier gas. The carrier gas is fed from a cylinder 16 through a gas refiner 17, and its flow rate is controlled by a mass-flow controller 18. As a result, the title superlattice can be grown at a low temperature, and the superlattice having few lattice defects can be mass-produced.
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