| 发明名称 |
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| 摘要 |
PURPOSE:To clear or rewrite memory contents by forming a high field region in the semiconductor substrate and by injecting carriers from the surface of semiconductor device into the insulating film passing through an energy barrier. |
| 申请公布号 |
JPS6252475(B2) |
申请公布日期 |
1987.11.05 |
| 申请号 |
JP19770037540 |
申请日期 |
1977.04.04 |
| 申请人 |
KOGYO GIJUTSUIN |
发明人 |
HAYASHI YUTAKA;TARUI YASUO;NAGAI KYOKO |
| 分类号 |
H01L21/8247;G11C14/00;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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