| 摘要 |
<p>The present invention relates to silver filled glass metallizing pastes (14) which are particularly suitable for bonding semiconductive devices (12) to ceramic substrates (10). More specifically, the silver-filled glass metallizing paste suitable for bonding semiconductor devices to ceramic substrates consists essentially of in percentages by weight: (a) 25 to 95% silver flake having a surface area of at least about 0.2 m<2>/g and an average tap density in the range of 3.2 to 4.0 g/cm<3>; said paste being characterized by less shrinkage and fillet cracking when fired in the bonding of a semiconductive device to a ceramix substrate than a corresponding paste based on silver particulate having a tap density in the range of 2.2 to 2.8 g/cm<3>; (b) 75 to 5% of a substantially sodium-free high lead borate glass frit having a softening temperature below 425 DEG C, a coefficient of thermal efficiency no higher than about 13 ppm/ DEG C, a surface area of at least about 0.3 m<2>/g and a tap density of up to 3.6 g/cm<3>; and (c) a liquid organic vehicle in an amount sufficient to provide a percent solids in the paste of about 75 to 85%.</p> |
