| 摘要 |
PURPOSE:To improve breakdown strength against noise pulses, in a semiconductor device having a series resistor at the input or output terminal of an MISFET, by constituting the resistor with a resistor having a positive temperature coefficient. CONSTITUTION:A resistor 10, which is constituted by a polycrystalline silicon film, is formed in series with a gate electrode 9 of an MIS type FET. The doping concentration of the polycrystalline silicon film constituting the resistor 10 is selected so that the temperature coefficient of the value of electric resistance is positive. The resistor 10 acts to decrease the peak value of the high voltage pulses of noises, which enter from the outside. Since the resistance value has the positive temperature coefficient during this action, current concentration due to the pulses is not generated. Therefore, strength against thermal breakdown becomes high. Therefore, the breakdown strength against the input noise pulse voltage can be improved to a large extent.
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