发明名称 |
Mos type integrated semiconductor device with nonuniform thickness of gate oxide and process for fabricating it. |
摘要 |
<p>In an integrated MOS device, MOS transistors belonging to circuit sections destined to operate at different voltages are provided with an insulating layer of gate oxide of thickness suitably differentiated through a modification of known fabrication processes, increasing it in the case of transistors subject to higher supply voltages.</p> |
申请公布号 |
EP0244367(A2) |
申请公布日期 |
1987.11.04 |
申请号 |
EP19870830113 |
申请日期 |
1987.03.25 |
申请人 |
SGS MICROELETTRONICA S.P.A. |
发明人 |
PICCO, PAOLO;CAVIONI, TIZIANA;MAURELLI, ALFONSO |
分类号 |
H01L21/8247;H01L21/8234;H01L27/088;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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