| 摘要 |
<p>PURPOSE:To enhance the detecting accuracy of a mark without varying the characteristics of a semiconductor device by forming a groove by an RIE method on the surface of a substrate, forming a semiconductor layer on the surface of the substrate, and forming a step for mask alignment corresponding to the groove on the surface of the layer. CONSTITUTION:With an SiO2 film 42 and an Si3N4 film 43 as masks a groove 44 of approx. 0.3-1mum is formed on the front surface side of a substrate 41 by an RIE method. After the film 43 is then removed, with the groove 44 as a mask alignment mark the photolithography of an N<+> type buried layer is performed to form an N<+> type buried layer. Then, after the film 42 is removed, an N-type semiconductor layer 45 is formed, and a mask alignment mark of a step 46 corresponding to the groove 44 is formed on the surface of the layer 45. Since the groove 44 is deeply formed in this manner, even if the layer 45 is epitaxially grown on the substrate 41, a step 46 corresponding to the groove 44 is not reduced on the semiconductor layer, but the mark becomes of a definite shape.</p> |
