| 摘要 |
PURPOSE:To obtain a high SN ratio and high resolution, by removing an unnecessary low-resistance semiconductor layer other than a photodetector part by etching, thereby eliminating surface leaking current, and eliminating the contribution of an extra optical carrier other than the photodetector part to photocurrent. CONSTITUTION:Chromium is evaporated on a glass substrate 1. The chromium is patterned by etcing, and a metal electrode 2 is formed. Then, an undoped high-resistance amorphous silicon layer 3 is deposited by the glow discharge decomposition of silane. Then a P-type amorphous silicon carbide layer 4 is deposited. A transparent electrode 5 and a light screening film 6 are further formed. With the light screening film 6 as a mask, dry etching is performed by using carbon tetrafluoride gas, and the unnecessary P-type amorphous silicon carbide layer is etched away. Then a window is formed at a part of the light screening film 6, where a photodetector is formed, and the element is completed. |
