| 摘要 |
PURPOSE:To simplify mask alignment at the time of patterning by using either MgO or TiO2 as an intermediate layer in a mask of 3-layer structure having upper and lower layers, each with resist film. CONSTITUTION:Chlorine gas is used as reactive gas, and a mask is used to etch III-V semiconductor substrates, such as GaAs, InP, etc. In this case, a mask in formed in a 3-layer structure having an lower layer 2 and an upper layer 4, each with a resist film, and a intermediate layer 7 is formed of either MgO or TiO2. Thus, mask alignment at the time of patterning can be remarkably simplified.
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