发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To remove initial rejects in a short period by providing an aging potential supplying means to supply a constant potential different from the one at the time of the usual action to a cell plate at the time of aging so that the absolute value of the voltage added to a capacitor can be made larger than the time of the usual action, increasing the voltage added to the capacitor with an aging potential supplying means at the time of aging compared with the time of the usual action and accelerating the aging. CONSTITUTION:An aging potential supplying means 16 is constituted of MISTs 12-15, and at the time of aging, supplies the constant potential different from the one at the time of the usual action to a cell plate 4. When the potential given to the cell plate 4 is Vcp, MISTs 12 and 13 are conducted by phi1=Vcc and phi1=Vss at the time of the usual action and MISTs 14 and 15 are interrupted, and therefore, Vcp=VM is obtained and the completely same action as the conventional one is executed. On the other hand, since phi1=Vss and phi=Vcc are obtained at the time of the aging, Vcp=Vss can be obtained. Thus, even when the power source voltage of a device at the time of the aging is made into the same as the one at the time of conducting and using, the aging of the capacitor of a memory cell can be accelerated.
申请公布号 JPS62252598(A) 申请公布日期 1987.11.04
申请号 JP19860095614 申请日期 1986.04.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 MASUKO KOICHIRO;ARIMOTO KAZUTAMI
分类号 G11C11/404;G11C11/34;G11C11/401;G11C29/00;G11C29/06 主分类号 G11C11/404
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