| 摘要 |
PURPOSE:To access a large volume of information at a high speed by connecting the bit line for a column address signal much more than the number of the bit line for a row address signal and constituting a column system circuit by a static circuit. CONSTITUTION:In the constitution of the bit (memory cell) of a memory array MARY, the figure is drawn independently of the geometric arrangement of real memory cell and it is effective for speedup or the like of an operation to divide the memory cells into plural memory mats to shorten word line length or data line length. Although no specific control is executed here, the memory array is constituted of 256 word lines (row) and 1,024 data lines (column). Therefore, the memory cells consisting of about 256K bits in all are formed. Consequently, each row address signal is constituted of 8 bits and each column address signal is constituted of 10 bits. When two semiconductor storage devices are used as shown by a solid line and an alternate long and short dash line, a picture element consisting of horizontal 640 dots (bits) and vertical 400 dots (bits) and assigned to a screen of a CRT can be stored. |
