| 摘要 |
<p>A method of making a dimensionally stable mask suitable for use in X-ray lithography involves preparing a mask blank comprising a series of continuous laminae (4, 6, 8) which include a boron-doped epitaxial silicon barrier layer (6), which ultimately forms the support of an X-ray absorbing metal deposited thereon. This deposition is effected in such a way that the metal is chemically bonded to the boron-doped epitaxial silicon barrier layer (6) in the finished pattern it is to adopt. The underlying substrate (4), which comprises a silicon wafer on one surface of which the boron-doped eptiaxial silicon layer (6) is grown, is etched away from beneath this layer (6) either before or after the X-ray absorber material (10) has been vapour deposited thereon.</p> |
