A semiconductor device with periodic structure.

摘要

A semiconductor device utilizing the fact that the effective mass of charge carriers becomes very large at certain points in the direction of a periodically repeating potential has therefore a periodic structure (6) which is formed in at least one of a semiconductor layer, an insulating layer, or a conductor layer of the device. The charge carriers are not scattered in the direction of the periodic pattern and their mobility is thus very large. A field effect transistor having such a periodic structure formed in a direction perpendicular to the source-drain direction is also disclosed.