| 摘要 |
PURPOSE:To obtain a high breakdown strength semiconductor device without dispersion in manufacturing, in a planar thyristor and a TRIAC, by making the area of an outer junction part to be the smallest, and setting the optimum interval between field rings. CONSTITUTION:A first P-type diffused layer 2 is formed in a substrate 1. An N<+> diffused layer 5 is formed in the layer 2. A second N<+> diffused leyer 3 is formed so as to surround the layer 2. A second P-type diffused layer 4 surrounding the layer 2 is formed between the layer 2 and the layer 3. Meanwhile, a third P-type diffused layer 6 is formed on the other surface of the substrate 1. A fourth P-type diffused layer 7 is formed on the outer surface. An oxide film 8 is provided on the surface. A gate electrode 9 and an emitter electrode 10 are formed through openings. In this constitution, the thickness of the substrate 1 is set at about 200mum, and resistivity is set at 35-500OMEGAcm. The diffusing depth of the first-third P-type diffused layers 2, 4 and 6 is set at 40-46mum. The diffusing depth of the second N<+> diffused layer 3 is set at about 20mum. The interval between the second N<+> diffused layer 3 and the second P-type diffused layer 4 is set at 103mum or more. The interval between the first and second diffused layers is set at 103-110mum. |
