| 摘要 |
An MOS capacitive structure comprising a substrate of a first conductivity type, a first region of the first conductivity type but having a different impurity concentration for contacting the substrate, a second region of opposite conductivity type for contacting the substrate, and a dielectric over a region of the substrate adjacent the first and second regions and having a conductive layer thereon forming one plate of the capacitor while the substrate opposite the conductive layer forms the other plate. The first and second regions are contacted and coupled together in order to provide good electrical contact to the substrate region opposite the conductive layer regardless of whether the substrate under the conductive layer is depleted or inverted.
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