发明名称 SEMICONDUCTOR DEVICES
摘要 <p>A semiconductor device comprises a base semiconductor portion and first and second elevated semiconductor portions thereon separated by a channel. The uppermost surface of the first elevated semiconductor portion carries a metal electrical contact layer and the uppermost of the second a dielectric layer. The surfaces defining the channel are substantially free of metal and dielectric. The structure can be used in a ridge waveguide laser, the first elevated semiconductor portion constituting the ridge. Distributed feedback corrugations may be incorporated in such devices or in other ridge waveguide structures.</p>
申请公布号 CA1228936(A) 申请公布日期 1987.11.03
申请号 CA19850475924 申请日期 1985.03.07
申请人 BRITISH TELECOMMUNICATIONS PLC 发明人 FIDDYMENT, PHILIP J.;WESTBROOK, LESLIE D.;NELSON, ANDREW W.
分类号 G02B6/122;G02B6/12;H01L21/205;H01L21/306;H01L33/00;H01S5/00;H01S5/12;H01S5/22;(IPC1-7):H01S3/19;H01S3/06 主分类号 G02B6/122
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