发明名称 |
Technique for fabricating a sidewall base contact with extrinsic base-on-insulator |
摘要 |
The disclosure relates to a bipolar transistor having reduced base-collector capacitance and a method of making the transistor by forming a sidewall base contact with polycrystalline silicon-on-insulator. The structure is achieved by using differential oxidation to grow thicker oxide over heavily doped N+ regions in a sacrificial polycrystalline silicon layer with the sidewall base region being protected from doping by a sidewall oxide and limited anneal of the N+ dopant. Both NPN and PNP bipolar transistors with minimum collector-base capacitance can be fabricated using this technique.
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申请公布号 |
US4703554(A) |
申请公布日期 |
1987.11.03 |
申请号 |
US19860856848 |
申请日期 |
1986.04.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HAVEMANN, ROBERT H. |
分类号 |
H01L21/331;(IPC1-7):H01L21/263;H01L21/203 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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