| 摘要 |
PURPOSE:To eliminate characteristic malfunction and yield decrease due to the malfunction by employing an alloy of molybdenum and titanium as barrier metal to reduce the side etching of the barrier metal in the case of after-etching to eliminate a separating phenomenon. CONSTITUTION:An N-type epitaxial wafer (substrate is of N<+> type) 1 is oxidized, a silicon dioxide film 2 is formed, and the film 2 of a portion for forming a Schottky barrier metal is then removed. Then, molybdenum alloy which contains 10% of titanium is deposited in vacuum to form an alloy layer 3 of the molybdenum and the titanium, a titanium film 4 and an aluminum film 5 are continuously formed. The films 5, 4, and the layer 3 are sequentially etched to obtain a Schottky barrier diode. The barrier metal is not separated even during etching of the metal and during the following steps. |
