| 摘要 |
PURPOSE:To hardly separate the surface electrode of a semiconductor element at wire bonding time by providing electrodes in a groove formed on the electrode forming surface of the element. CONSTITUTION:The flat portion B of an AlGaAs/GaAs surface light emitting diode is formed, for example, of a single hetero junction formed of a GaAs substrate B1, an AlGaAs light emitting layer B2, an AlGaAs barrier layer B3. A P-type side electrode E1 is formed in a circular groove formed at the center on the surface of the layer B3 and an N-type side electrode E2 is formed by vacuum depositing on the entire lower surface of the substrate B1. Since the electrode E1 of a light emitting diode obtained in this manner is held in the groove of the layer B3, a separation at wire bonding time can be suppressed, and the contacting area of the electrode E1 with the element is increased without deteriorating modulating characteristic due to an increase in the capacity of the element to reduce an ohmic resistance, thereby increasing the light emitting intensity of the element. |
