| 摘要 |
PURPOSE:To remarkably improve the operating efficiency of the step of forming a reflecting mirror due to cleavage by removing the electrode metal of an element separation unit of a semiconductor laser wafer to improve the cleaving property. CONSTITUTION:Four layers of an N-type InP clad layer 5-1, an undoped InGaAsP active layer 5-2, a P-type InP clad layer 5-3 and a P-type InGaAsP contact layer 5-4 are grown as an active region 5 on an N-type InP substrate 3 by a liquid epitaxial growth method. Au/Ge are deposited as an N-type side electrode 6, and a striped electrode 2 to the P-type layer is patterned by depositing Au/Zn. A protective film 7 of SiO2 is formed on an element separation unit 8 on the P-type surface, and An is deposited as an electrode 1. The electrode metals of the element separation units 8 of both side surfaces are removed by etching, and portions A-A', B-B'. to be cleaved are disposed merely with Au-Zn alloy of thin striped electrode 2 on the P-type surface.
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