| 摘要 |
PURPOSE:To preferably form an electrode by emitting a plasma to the surface of a compound semiconductor to perform an activating process, and then O2 plasma processing it. CONSTITUTION:An Si3N4 film 3 is etched to form a hole 5, CF4 plasma is emitted to an exposed n-type conductive layer 2 to activate the surface of the exposed layer 2, O2 plasma is then emitted to form a thin oxide film 6. The film 6 is dipped in aqueous solution of HCl to be removed, thereby obtaining a clean surface. After drying, Au-Ge, Au are deposited by a vacuum depositing method, deposited metal remains only in the hole by a lifting off method, and heat treated to form an ohmic electrode 7.
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