| 摘要 |
PURPOSE:To suppress an abnormal projection in the step of later reduced pressure CVD method by heat treating a phosphorus glass (PSG) film in steam and inert gas. CONSTITUTION:An MOS-FET on which an N-type source diffused layer 1, a drain diffused layer 2, a gate electrode 3 and an element separating oxide film 4 are formed is formed on an Si substrate 5. A PSG film 6 is grown by a CVD method due to the reaction of SiH4, O2 and PH3 on the MOS-FET, the substrate is heat treated in steam atmosphere, and heat treated in N2 atmosphere. Then, an SixNy film 7 is grown by a reduced pressure CVD method due to reaction of SiH21Cl2. NH3, and a polycrystalline Si film 8 is grown by a reduced pressure CVD method due to thermal decomposition of SiH4. Thus, an abnormal projection does not occur to improve a manufacturing yield.
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