| 摘要 |
PURPOSE:To obtain a semiconductor device having a small gate length and a small gate resistance by a method wherein an insulating film is spread on a semiconductor substrate, photoresists of two layers are connected further thereon, an opening is made in the insulating film by dry etching, the photoresist fo the upper layer is removed by an 02 asher, and a gete metal is connected on the whole surface. CONSTITUTION:A silicon exide film 2 is formed on a GaAs substrate 1 by a CVD method. Next, a modified layer 4 is formed on the surface of a photoresist, and a positive-type photoresist 5 is formed thereon by a spin-coating method. Thereafter a region 6 wherein a gate is to be formed is exposed, the photoresist 5 of the upper layer is developed, and the modified layer 4 of the surface is removed by oxygen plasma. Moreover, after a photoresist 3 of the lower layer is developed, an opening is perforated in the silicon oxide film 2 by etching so as to expose the GaAs surface 1, the upper-layer resist 5 is removed by oxygen plasma, and then aluminum 7 is connected as a gate metal on the whole surface by a vacuum evaporation method. GaAs FET having a gate formed has sufficiently small gate length and obtains an excellent RF characteristic.
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