发明名称 ION PLATING APPARATUS
摘要 PURPOSE:To form high quality vapor-deposited film of a uniform thickness on substrates by placing a crucible as an evaporating source in an ion plating apparatus so that it can be vertically moved between the substrates. CONSTITUTION:Substrates 5 on which vapor is deposited are rotatably arranged in the body 13 of an ion plating apparatus and a crucible 1 contg. a material 2 for vapor deposition is placed at the lower part so that it can be vertically moved between the substrates 5. A coil 3 as an electron beam generating source is placed at the upper part and connected to the negative electrode of a DC power source 7 and the crucible 1 is connected to the positive electrode. Electron beams 4 from the coil 3 are converged on the material 2 in the crucible 1 with a permanent magnet 10 placed under the crucible 1 to heat the material 2. The material 2 is melted and evaporated by the heating and the resulting vapor is deposited on the surfaces of the rotating substrates 5. At this time, the crucible 1 is vertically moved between the substrates 5 so that the material 2 is vapor-deposited on the surfaces of the substrates 5 to a uniform thickness with superior adhesion.
申请公布号 JPS62250169(A) 申请公布日期 1987.10.31
申请号 JP19860093407 申请日期 1986.04.24
申请人 NACHI FUJIKOSHI CORP 发明人 HASHIMOTO TAKANOBU
分类号 C23C14/28;C23C14/32 主分类号 C23C14/28
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