| 摘要 |
PURPOSE:To etch polysilicon in an anisotropic manner with high precision and excellent reproducibility, to realize anisotropic etching only by controlling the quantity of the mixed gas of halogen gas and an inert gas and to obtain a semiconductor device having high performance by etching polysilicon by active ions by using the mixed gas. CONSTITUTION:When polysilicon is etched in an anisotropic manner, RIE is conducted, employing the mixed gas of halogen gas, such as fluorine gas, chlorine gas, etc. and an inert gas, such as nitrogen, argon, etc as a reaction gas The quantity of halogen radicalsn such as chlorine radical s reacting with polysilicon is controlled simply by controlling the flow rate of halogen gas such as chlorine gas fed to the system of the reaction of RIE, and the quantity of the ions of the inert gas such as argon as a sputtering source for a resist is also con trolled simply by controlling the flow rate of the inert gas supplied to the system of the reaction of RIE. Accordingly, each flow rate is used as independent parameters and controlled and RIE is performed, thus realizing the anisotropic etching of polysilicon with excellent reproducibility and high precision.
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