发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To speed up rising by bringing an electrode of a reference potential side of bootstrap capacitance precharged to a prescribed potential into a high level by an inverter circuit receiving an input timing signal thereby obtaining a boosting voltage from the other electrode. CONSTITUTION:When a word line selection timing signal phix' is generated, a P-channel output MOSFET Q3 is turned on and an N-channel output MOSFET Q4 is switched into the OFF state. Since the output signal of an inverter circuit IV2 is changed from a low level into a high level nearly at the same time, the potential of the other electrode of bootstrap capacity CB is boosted to a high voltage by the addition of a high-level output signal of the inverter circuit IV2 to the precharge voltage. The boosted voltage is sent as a word line selection timing signal phix through the P-channel output MOSFET Q3 in the ON state. Thus, the word line selection timing signal phix rises linearly up to a high voltage boosted as a desired value from the low level.
申请公布号 JPS62250590(A) 申请公布日期 1987.10.31
申请号 JP19860092053 申请日期 1986.04.23
申请人 HITACHI LTD 发明人 SATO KATSUYUKI;ISHII KYOKO;YANAGISAWA KAZUMASA
分类号 G11C11/407;G11C11/34 主分类号 G11C11/407
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