| 摘要 |
PURPOSE:To form a positive type pattern by mounting the resist layer having the positive type double layer structure on a substrate having a step structure, and by exposing the resist layer with an ionizing radiation. CONSTITUTION:The substrate to be treated is, at first, coated with a resin layer so as to level the step of the substrate. The resin layer is coated with the positive type resist layer contg. a mixture of 30-80pts.wt. cross-linking methacrylate polymer, 10-30pts.wt. partial rudder type silicone resin and 0-40pts.wt. 1,4 bis-(hydroxydimethylsilyl) benzene so as to form the double layer structure. The resist layer is exposed selectively with the ionizing radiation, processed, and open a window to the resist layer. The resin layer located under the resist layer is oxygen plasma-etched using the resist layer as a mask. As the methacrylate resist is heat-crosslinked in a prebake, the silicone resin contd. in the resist composition generates heat fog. In order to prevent the heat fog, the heat-crosslinkable 1,4 bis-(hydroxydimethylsilyl) benzene is added to the composition in the prebake. |
