发明名称 SHIELD FOR SPUTTERING SOURCE
摘要 PURPOSE:To allow a sputtered target material to come only in approximately the same area as the area of an Si wafer by covering a sputtering source and a shutter movable range of a sputtering device with a shielding material and providing an aperture of approximately the same area as the area of the Si wafer to the shielding material. CONSTITUTION:The sputtering source 2 is provided on the vacuum side on the wall surface of a vacuum vessel 1 and the Si wafer 3 is attached to face the same by a holder 4. The sputtering source shield 8 formed by having the aperture of approximately the same area as the area of the sputtering source 2 and movably attached with a shutter plate 6 to a cylinder having the aperture of approximately the same area as the area of the Si wafer 3 is fixed by screws 11 to the shield 7. The shutter 6 is housed into the box part of the shield 8 when the shutter 6 is opened at the time of forming a thin film on the Si wafer 3 by sputtering. The target material sputtered from the sputtering sources passes the aperture of the area approximately the same area of the Si wafer 3 so that only the target material of the area approximately the same as the area of the Si wafer splashes onto the Si wafer. The incoming of a large amt. of the target material to the part except the Si wafer surface is thus prevented.
申请公布号 JPS62250173(A) 申请公布日期 1987.10.31
申请号 JP19860093605 申请日期 1986.04.22
申请人 NEC CORP 发明人 SUZUKI YASUHIKO
分类号 C23C14/04;C23C14/34 主分类号 C23C14/04
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