发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To attain high speed by giving a time difference between the operation of a sense amplifier and its output changeover when only a read signal of the number of split bits among plural bits is sent to an external terminal to send only a true read signal to an output signal path. CONSTITUTION:When an address signal Ai is at a low level, an output signal of a NOR gate circuit G4 goes to a high level, the output signal of a NOR gate circuit G6 is brought into the low level, a control signal S1 reaches the high level in a comparatively fast timing to bring sense amplifiers SA0-SA7 to the operating state. In this case, sense amplifiers SA8-SA15 remain inactive and a CMOS switch circuit comprising MOSFETs Q3, Q4. In response to the output signal of an inverter circuit N9 brought into the low level with a delay, an output signal S1' of a NOR gate circuit G7 changes from the low level to the high level. Thus, the MOSFETs Q1, Q2 are turned on with a delay and an output signal of the sense amplifiers is sent to external terminals D0-D7.</p>
申请公布号 JPS62250596(A) 申请公布日期 1987.10.31
申请号 JP19860092181 申请日期 1986.04.23
申请人 HITACHI VLSI ENG CORP;HITACHI LTD 发明人 SAKAI KIKUO;SHIBATA TAKASHI;SHIRAI MASAKI;OGATA SHINKO
分类号 G11C17/18;G11C17/00 主分类号 G11C17/18
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