| 摘要 |
PURPOSE:To form a flat film through etch-back, and to apply an etchback process even to a semiconductor device having a fine wiring space by forming a thin-film onto a semiconductor substrate, to which a first wiring conductive layer is shaped through a thin-film deposition method, and burying an insulating film only into the recessed section of the thin-film. CONSTITUTION:In an etch-back technique for manufacturing a semiconductor device in which a multilayer interconnection is realized on a semiconductor substrate, a first layer Al wiring is formed, and a layer insulating film is shaped through a thin-film deposition method, such as sputtering, a CVD method or the like. An organo silanol solution is applied, and a flat film 5 is formed through heat teatment. The film 5 is etched back by the mixed gas (b) of a Freon group gas and O2, and etching is completed when the head of a thin-film 4 is exposed, thus forming an extremely flat inter-layer film.
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