| 摘要 |
PURPOSE:To obtain an optical switching element provided with a transistor portion having a high ON/OFF ratio, by using for a solar cell element a photo- sensitive portion formed of an amorphous silicon layer of three layer construction in a P-I-N structure and metal electrodes formed of chrome or nichrome as the upper electrodes thereof. CONSTITUTION:When a signal light L enters a solar cell element, an electromotive force is generated in a photo sensitive portion 23. By this electromotive force generated, a channel 26A is formed in an active layer 26 of a thin film transistor portion through the intermediary of a second electrode 24 and an insulating film 25. Accordingly, this thin film transistor portion is put in the 'ON' state. When no signal light L enters, to the contrary, no electromotive force is generated in the photo sensitive portion, the Channel 26A is not formed, and therefore this transistor portion is put in the 'OFF' state. Thus, an optical switcing element is completed.
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