| 摘要 |
PURPOSE:To improve the degree of integration, and to increase working speed by forming a conductive layer to the side surface of a gate electrode through an insulating film and shaping a voltage applying electrode for forming inversion type source-drain regions to the surface of a semiconductor substrate, connected to the conductive layer. CONSTITUTION:A gate oxide film 2 consisting of SiO2 is formed onto an silicon substrate 1, and a gate electrode 5 composed of polycrystalline silicon and having short gate length is shaped onto the gate oxide film 2. A conductive layer 8 made up of polycrystalline silicon is formed on the side surface of the gate electrode 5 through a thermal oxide film 7. A voltage applying electrode 12 for shaping inversion source-drain regions 4 to the surface of the silicon substrate 1 in the lower section of the conductive layer 8 is connected to the conductive layer 8. Source-drain regions 3 into which an impurity is introduced by using the gate electrode 5 and the conductive layer 8 as masks are formed to the surface of the silicon substrate 1.
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