| 摘要 |
<p>PURPOSE:To obtion extremely high damp-proofing property as a pad section or a contact hole between each of wirings by coating an insulating-film bound ary layer exposed to the side wall of an opening section for an insulating protec tive film and functioning as a moisture intrusion path into the hole with an silicon nitride film. CONSTITUTION:A field insulating film 2 is formed onto a semiconductor substrate, insulating protective films having two layer structure consisting of an aluminum wiring 3, phosphosilicate glass 4 and an silicon oxide film 5 are each shaped, and an opening section 6 is formed onto the aluminum wiring 3. An silicon nitride film 7 is shaped, and a resist 8 is patterned. The silicon nitride film 7 is removed selectively on the aluminum wiring 3, employing the resist 8 as a mask to form an opening section 9. The side wall of the opening section 9 is coated completely with the silicon nitride film 7. Accordingly, a bonding wire 10 is contact-bonded into the opening section 9 and sealed with a resin 11, thus preventing major accidents such as the change of properties, elimination, etc. of a pad section.</p> |
