发明名称 VAPOR GROWTH DEVICE
摘要 PURPOSE:To uniformize the film thickness of crystal on wafers, by inclining a susceptor periphery against the central line of its supporting axis and coinciding its inclination with the rotational direction so that a uniform flow of gas is obtained. CONSTITUTION:A susceptor 2 is arranged inside a bell-jar 1. The side plane of the susceptor 2 is formed in a pyramidal shape (octagonal in this example) having inclination in the rotational direction against the central line of its supporting axis, and the top part being formed in a shape of rotational parabolic planes. Wafers 5 are mounted on the flat planes of the pyramid. Then, a raw- material gas, passing on the plane curved smoothly from the top part of the susceptor 2, attains to the wafers from the longitudinal direction of the flat planes on which the wafers 5 are mounted without being disturbed at all by the rotation of the susceptor 2. Hence, the film thickness of crystal on the wafers 5 can be uniformized.
申请公布号 JPS62248218(A) 申请公布日期 1987.10.29
申请号 JP19860091327 申请日期 1986.04.22
申请人 TOSHIBA CORP 发明人 OMINE TOSHIMITSU;ISHIHATA AKIRA
分类号 H01L21/205 主分类号 H01L21/205
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