| 摘要 |
PURPOSE:To improve the adhesive properties of a diaphragm and an insulating layer by constituting the insulating layer formed onto the diaphragm of a boron nitride layer shaped through an ion mixing method. CONSTITUTION:A boron nitride layer in film thickness of approximately 600Angstrom is shaped onto the surface of a diaphragm 1 through an ion mixing method, a boron nitride layer in approximately 1mum thickness is formed onto the boron nitride layer through a CVD method, and these boron nitride layers are used as an insulating layer 2. An N-type microcrystalline silicon layer 5 and an aluminum layer 6 are shaped, the aluminum layer 6 is patterned to form a mask, and pressure-sensitive resistance layers R1-R4 and electrode wiring patterns E1-E6 are formed by using the mask.
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