发明名称 POWER SOURCE CONTROL CIRCUIT FOR HIGH OUTPUT TRANSISTOR AMPLIFIER
摘要 PURPOSE:To cut a demand, to reduce a calorific value, to improve profitability, and to miniaturize a structure, by controlling a power source voltage synchronizing with the presence/absence of a burst-shaped RF signal, and impressing a bias voltage on an amplifier only when the signal exists. CONSTITUTION:A burst signal sending control circuit 21 controls a protection circuit 3 so that the power source voltage is impressed on a high output transistor amplifier 1 only when the RF signal exists. In other words, a transistor 22 is turned on or off by the control signal from the burst sending control circuit 21. Therefore, a transistor 9 is turned on or off. Consequently, since a transistor 8 goes to an on-state only when the RF signal exists, a current is permitted to flow on a field effect transistor 7, thereby accomplishing a function as the high output transistor amplifier 1.
申请公布号 JPS62248301(A) 申请公布日期 1987.10.29
申请号 JP19860092649 申请日期 1986.04.21
申请人 MITSUBISHI ELECTRIC CORP 发明人 DOMAE MITSUHIRO;YOSHIKAWA YOSHIHIKO;SAEKI AKIO;YAMANAKA OSAMU
分类号 H03F3/21;H03F1/02;H03F1/42;H03F1/52;H03F3/20 主分类号 H03F3/21
代理机构 代理人
主权项
地址