发明名称 FIELD EFFECT TRANSISTOR FREQUENCY MULTIPLYING CIRCUIT
摘要 PURPOSE:To eliminate unstableness of a multiplying circuit and to improve possibility of oscillations by putting an attenuating circuit between a field effect transistor FET and a basic wave trap circuit. CONSTITUTION:The component of frequency 2fO delivered from a drain D of an FET2 is applied to a load at a prescribed level and with high efficiency by a matching circuit 4 and an attenuator 5. A basic wave trap circuit 3 functions as an open stub of lambdag/2 to the 2fO component and therefore the imped ance is infinite in case the open stub is viewed from a point (a). Thus the circuit 3 gives no influence. However, the 2fO component is reflected again by the drain D and then returns to the drain D after undergoing double attenuation in a reciprocating movement owing to presence of the attenuator 5. In this case, the unstableness of an FET frequency multiplying circuit is eliminated together with improvement of possibility of oscillations as long as the reflection coefficient is smaller than one when the FET2 is viewed from e gate G.
申请公布号 JPS62247608(A) 申请公布日期 1987.10.28
申请号 JP19860083382 申请日期 1986.04.11
申请人 FUJITSU LTD 发明人 IWATSUKI MASANORI
分类号 H03B19/14 主分类号 H03B19/14
代理机构 代理人
主权项
地址