| 摘要 |
PURPOSE:To form resistors or wirings on a semiconductor element region and improve the degree of integration of a semiconductor integrated circuit device by a method wherein polycrystalline silicon layers for formation of the contacts of respective electrodes of a semiconductor element are formed, and on the polycrystalline silicon layers polycrystalline silicon layers for formation of the resistors or the wirings are formed through insulating films. CONSTITUTION:A base electrode 11a, an emitter electrode 11b and a collector electrode 11c are consisting of respectively polycrystalline silicon layers formed at the mask process for formation of the contacts of the respective electrodes. Resistors or wirings 12 are consisting of polycrystalline silicon layers for formation of the resistors or the wirings formed at the slicing process. At the semiconductor integrated circuit device like this, because the polycrystalline silicon layers forming the base electrode 11a, the emitter electrode 11b and the collector electrode 11c are parted separately from the polycrystalline silicon layers forming the resistors or the wirings 12, arrangement of the resistors or the wirings 12 consisting of the polycrystalline silicon layers on the transistor region can be attained. |
