| 摘要 |
PURPOSE:To realize a ZnSe blue light emitting diode having a high light emitting efficiency by preventing a decline of a hole injection efficiency on an interface by composing an insulating layer also out of ZnSe single crystal so as to enable continuous formation of an N-type ZnSe layer and the insulating layer. CONSTITUTION:This light emitting diode comprises an N-type GaAs single crystal substrate 1, an N-type ZnSe layer 2 epitaxially grown on the substrate 1, an insulating ZnSe layer 3, a metallic electrode layer 4, and an ohmic electrode 5 which are epitaxially grown further on said layer 2. The reason why CaAs is used for the substrate 1 is that its lattice constant is almost the same as that of ZnSe and a good ZnSe single crystal layer can be epitaxially grown. As a method for this epitaxial growth, for example, molecular beam epitaxy is suitable. In this case, a proper impurity is evaporated together with a crystalline matrix material ZnSe and by changing a kind of the impurity, the N-type ZnSe layer 2 and the insulating ZnSe layer 3 can be grown continuously in order. |
