| 摘要 |
PURPOSE:To increase a gamma-value without delaying a response speed by forming a thin film consisting of a solid solution CdSCdSe on an insulating substrate and exposing this thin film to a vapor of CdC-l at high temperature to activate it photoelectrically and irradiating it with a light above a specified quantity and forming an opposite electrode after that. CONSTITUTION:On an insulating substrate 1, a thin film 6 consisting of CdS, CdSe or their solid solution CdS-CdSe is formed and this film 6 is exposed to a vapor of CdCl2 at high temperature to be activated photoelectrically, after which the film 6 is irradiated with a light above a specified quantity. After that, an opposite electrode is formed and further a protective film 7 is formed. As a result, it becomes possible to increase a gamma-value without damaging the goodness of a photoconductive type optical sensor that a photocurrent value is large and without delaying an optical response speed of the above photocurrent. |
