FINE PATTERN FORMING METHOD

摘要

PURPOSE:To accurately obtain a fine resist pattern having submicron-level pattern dimensions and a high aspect ratio by forming the 2nd resist layer with a photosensitive resin composition consisting essentially of an alkali-soluble silicone resin and a photosensitive dissolution inhibitor. CONSTITUTION:An alkali-developable positive type silicone resin resist having extremely superior resolution, sensitivity and resistance to oxygen plasma is used as a resist 3 for an upper layer. When a coated film of a mixture of an alkali-soluble silicone resin with a photosensitive dissolution inhibitor is patternwise irradiated with light, only the irradiated parts are made soluble in an alkali developer and a positive type resist pattern is obtd. Such a resist pattern is formed on a film 2 of a proper org. polymer and O2RIE processing is carried out to etch the lower layer 2. The pattern of the upper layer is accurately transferred to the lower layer.