| 摘要 |
PURPOSE:To obtain an element having the desired gate trigger current value by a method wherein gate trigger curent value before a sintering process after Al electrodes are formed is measured previously and cooling speed after treatment is set by the value in the sintering process. CONSTITUTION:Gate treigger currnt value IGT is measured at a stage when each process of the formation of diffusion layers PE, PB and N and the formation of an opening of a contact hole to an oxide film 2 and Al electrode patterns 3, 4 is completed in a forming process of a planar type thyristor. The Al electrodes are sintered in the next heat treatment process. A condition of cooling speed (an effective range is 2-200 deg.C/min) for obtaining the desired IGT is set by utilizing a fact that the value of IGT after sintering has relation to the value of IGT before sintering and the cooling speed of an element after treatment at a high temperature. Thus, the value of IGT easy to be subject to the influence of the interface of the oxide film can be controlled, and yield can be improved. |
