| 摘要 |
PURPOSE:To increase a gamma-value without delaying a response speed by forming a thin film consisting of a solid solution CdS-CdSe on an insulating substrate and forming an opposite electrode after activating said thin film photoelectrically and further forming a protective film and irradiating a photosensor with a light of above a specified quantity at high temperature before forming front and rear protective films. CONSTITUTION:On an insulating substrate 1, a thin film 6 consisting of CdS, CdSe or a their solid solution CdS-CdSe is formed and this film 6 is exposed to a vapor of CdCl2 at high temperature to be activated photoelectrically, after which an opposite electrode is formed. Then, after forming the opposite electrode and before forming a protective film 7, this substrate is irradiated with a light above a specified quantity. As a result, it becomes possible to increase a gamma-value without damaging the goodness of a photoconductive type optical sensor that a photocurrent value is large and without delaying an optical response speed of the above photocurrent. |
