| 摘要 |
PURPOSE:To form a high-quality semiconductor single crystal film in an arbitrary form and to obtain a high-efficiency semiconductor device by a method wherein a process for forming an insulating film on a semiconductor single crystal substrate and a process, wherein the semiconductor single crystal substrate with the insulating film formed thereon is held in an atmosphere of reaction gas and laser light is scanned on the insulating film through the opening part of the insulating film, are provided. CONSTITUTION:An oxide film 2 is formed on a single crystal Si substrate 1 and moreover, an opening part 4 is formed at part thereof. Then, the single crystal Si substrate 1 is installed in a reaction device provided with a heater 3 and while the single crystal Si substrate 1 is heated up, laser light 5 is irradiated on the opening part 4 in an atmosphere of reaction gas having Si and carrier gas of nitrogen. Whereupon, the temperature of the irradiated part only is risen to thermally decompose silane gas and a semiconductor single crystal film 6 having the same axial direction as that of the single crystal Si substrate 1 is selectively grown epitaxially on the part only irradiated by the laser light 5. Then, by scanning the laser light 5, a semiconductor single crystal film 6 of an arbitrary form can be formed on the oxide film 2 as well.
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